William Watt Hutchison
نویسندگان
چکیده
منابع مشابه
Reply to Hutchison and Loomis
the perceived distance to a target is influenced by the effort required to walk to its location. Hutchison and Loomis (H&L) reported an experiment that failed to find a significant influence of effort on indices of apparent distance. There were numerous important differences between the design and methods of H&L’s study and those of Proffitt et al. Moreover, there are important theoretical reas...
متن کاملSurface resonances and sticking in the Hutchison model
It is shown that using the Hutchison prescription to account for inelastic effects on surface resonances can be partially justified when sticking is taken into account. The prescription is to multiply each elastic matrix element for collision with the repulsive potential by the appropriate ‘square root of the Debye–Waller factor’. It is shown that, under certain assumptions, it is correct to do...
متن کاملA hand list of the writings of Sir Robert Hutchison.
Sir Robert Hutchison has written and lectured and published books*, some in the best-seller class, for over 50 years. After working in chemistry and physiology and making some interesting researches into the thyroid gland, his arrival in London and in clinical medicine gave him the opportunity for which his qualities best suited him-of teaching. From the days in 1896 when in the residents' quar...
متن کاملThe new METAS Watt Balance, Mark II
In the context of the future new definition of the mass unit, kg, a promising route to link the mass unit to a fundamental constant, the Planck constant h, is represented by the watt balance experiment. Since a number of years, the Federal Institute of Metrology is active in this field and published a first result with its Mark I experiment in 2011. To reach the target uncertainty of 2 parts in...
متن کاملWATT GAN HEMT POWER AMPLIFIER FOR LTE 5 Watt GaN HEMT Power Amplifier for LTE
This work presents the design and implementation of a stand-alone linear power amplifier at 2.4 GHz with high output power. A GaN HEMT transistor is selected for the design and implementation of the power amplifier. The device exhibits a gain of 11.7 dB and a drain efficiency of 39 % for an output power of 36.7 dBm at 2.4 GHz for an input power of 25 dBm. The carrier to intermodulation ratio is...
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ژورنال
عنوان ژورنال: Episodes
سال: 1987
ISSN: 0705-3797,2586-1298
DOI: 10.18814/epiiugs/1987/v10i3/010